EFFECTS OF GAMMA-IRRADIATION ON SURFACE PROPERTIES AND DETECTOR PROPERTIES OF HG1-XCDXTE PHOTOCONDUCTORS

被引：9

作者：

JUNGA, FA

ANDERSON, WW

EMMONS, RB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/TNS.1978.4329524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1274 / 1282

页数：9

共 10 条

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[3]

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[4]

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[5] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J].

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WARFIELD, G .

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[6]

HORST RB, 1971, P DETECTOR SPECIALIT, P217

[7]

JUNGA FA, 1978, RADCTR7866 LOCKH PAL

[8] RADIATION EFFECTS IN HG1-XCDXTE [J].

MALLON, CE ;

GREEN, BA ;

LEADON, RE ;

NABER, JA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2283-2288

[9] MIS CAPACITANCE AND DERIVATIVE OF CAPACITANCE, WITH APPLICATION TO NONPARABOLIC BAND SEMICONDUCTORS [J].

MICHAEL, M ;

LEONARD, WF .

SOLID-STATE ELECTRONICS, 1974, 17 (01) :71-85

[10]

TASCH AF, 1970, 10TH INT C PHYS SEM

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