MINORITY-CARRIERS LIFETIME MEASUREMENTS IN CUINS2 BY PHOTOELECTROMAGNETIC EFFECT

被引:28
作者
MORA, S
ROMEO, N
TARRICONE, L
机构
[1] Istituto di Fisica, CNR-GNSM, 43100 Parma
关键词
D O I
10.1016/0038-1098(79)91028-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Minority carrier lifetimes and surface recombination velocities have been measured in both n-and p-type CuInS2 chalopyrite compounds, combining the photoelectromagnetic (PEM) effect and stationary photoconductivity (PC) effect. By using the experimental values of τp and τn we tried a valuation of the photovoltaic conversion efficiency for an ideal CuInS2 homodiode. © 1979.
引用
收藏
页码:155 / 157
页数:3
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