学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
V GROOVE MOS-TRANSISTOR TECHNOLOGY
被引:15
作者
:
HOLMES, FE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
HOLMES, FE
[
1
]
SALAMA, CAT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
SALAMA, CAT
[
1
]
机构
:
[1]
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
来源
:
ELECTRONICS LETTERS
|
1973年
/ 9卷
/ 19期
关键词
:
D O I
:
10.1049/el:19730333
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:457 / 458
页数:2
相关论文
共 5 条
[1]
BOLL HJ, 1972, P IEEE INT ELECTRON
[2]
KARP JA, 1972, P IEEE INT SOLID STA
[3]
ANISOTROPIC ETCHING OF SILICON
LEE, DB
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Laboratories, General Electric Company Limited, Hirst Research Centre, Wembley
LEE, DB
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4569
-
&
[4]
MORANDI F, 1971, ELECTRONICS, V44, P44
[5]
RODGERS TJ, 1973, IEEE T ELECTRON DEVI, VED20, P226
←
1
→
共 5 条
[1]
BOLL HJ, 1972, P IEEE INT ELECTRON
[2]
KARP JA, 1972, P IEEE INT SOLID STA
[3]
ANISOTROPIC ETCHING OF SILICON
LEE, DB
论文数:
0
引用数:
0
h-index:
0
机构:
Semiconductor Laboratories, General Electric Company Limited, Hirst Research Centre, Wembley
LEE, DB
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4569
-
&
[4]
MORANDI F, 1971, ELECTRONICS, V44, P44
[5]
RODGERS TJ, 1973, IEEE T ELECTRON DEVI, VED20, P226
←
1
→