DOUBLE INJECTION WITH NEGATIVE RESISTANCE IN SEMI-INSULATORS

被引：42

作者：

HOLONYAK, N

BEVACQUA, SF

THOMAS, RC

ING, SW

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.8.426

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：426 / &

共 6 条

[1] PROPERTIES OF SEMI-INSULATING GAAS [J].

GOOCH, CH ;

HOLEMAN, BR ;

HILSUM, C .

[2] POWER RECTIFIERS AND TRANSISTORS [J].

HALL, RN .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518

[3] DOUBLE INJECTION IN INSULATORS [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1962, 125 (01) :126-&

[4]

MELNGAILIS I, TO BE PUBLISHED

[5]

STAFEEV VI, 1962, SOV PHYS-SOL STATE, V3, P1829

[6]

STAFEEV VI, 1959, SOV PHYS-SOL STATE, V1, P763