FERMI SURFACE STUDY OF PURE AND DOPED ANTIMONY BY MEANS OF DE HAAS-VAN ALPHEN EFFECT

The de Haas-van Alphen effect of pure and tin or tellurium-doped antimony has been investigated using either the torque magnetometer or the low frequency field modulation technique. The Fermi surfaces of pure antimony consist of warped, large-tilt ellipsoids (α-carriers) and small-tilt ellipsoids (β-carriers) as far as the observed periods are concerned. A tilt angle of the former is 53°. while that of the latter is 88° from the trigonal axis. The Fermi surface for α-carries expands by 0.10 at.% tin-doping and contracts by 0.20 at.% tellurium-doping, on the other hand, that for β-carriers contracts by 0.10 at.% tin-doping. Because of these changes in Fermi surfaces being mainly due to the shift of the Fermi level, it is concluded that α-carriers are holes and β-carriers are electrons. © 1968, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.