MAGNETOSTATIC EFFECTS IN GRAIN ORIENTED SILICON IRON

被引:13
作者
CRAIK, DJ
MCINTYRE, DA
机构
[1] Department of Chemistry, University of Nottingham, Nottingham
[2] Electricity Council Research Centre, Capenhurst, Chesteor
关键词
D O I
10.1109/TMAG.1969.1066460
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The function of the free-surface poles appearing on oriented silicon-iron strips in controlling the domain structure is discussed. The energy of a simple 1800 domain structure is given as a function of the dimensions, angle of dip, and applied field; this model is shown to give high values of the magnetostatic energy for angles of misorientation greater than 2'. On general theoretical grounds, the proportion of 90’ domains is calculated as a function of the misorientation and is shown to agree with experiment. A detailed model of the 90° domain structure is discussed its magnetostatic energy is estimated and predictions of the equilibrium domain size are in reasonable agreement with observation. © 1969, IEEE. All rights reserved.
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页码:378 / &
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