DOUBLE RAMAN RESONANCES INDUCED BY A MAGNETIC-FIELD IN GAAS-ALAS MULTIPLE QUANTUM-WELLS

被引：13

作者：

CALLE, F ^{[1
]}

CALLEJA, JM ^{[1
]}

MESEGUER, F ^{[1
]}

TEJEDOR, C ^{[1
]}

VINA, L ^{[1
]}

LOPEZ, C ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 03期

关键词：

GAAS-ALXGA1-XAS SUPERLATTICES; FROHLICH-INTERACTION; SCATTERING;

D O I：

10.1103/PhysRevB.44.1113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A strong enhancement in the intensity of the Raman resonance profile has been observed in GaAs-AlAs multiple quantum wells, when the energies of different transitions are tuned by an external magnetic field. This finding is interpreted as double Raman resonances corresponding to some excited states and the ground state of the light-hole exciton as incoming and outgoing channels, respectively. Our results are best understood by assuming an exciton-phonon scattering mechanism instead of the usual free-electron-phonon interaction.

引用

页码：1113 / 1117

页数：5

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