COPPER IN SILICON N+-P JUNCTIONS

[1] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[2] DASSAM T, 1964, THESIS TU DRESDEN

[3] PRECIPITATION BEHAVIOUR OF COPPER IN SILICON SINGLE CRYSTALS [J]. PHYSICA STATUS SOLIDI, 1965, 12 (01): : 277 - &

[4] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[5] IRMLER H, 1958, Z NATURFORSCH PT A, V13, P557

[6] IRMLER H, 1959, THESIS TU BERLIN

[7] PSEUDO-ABRUPTE LEGIERTE P-N-UBERGANGE IN GAP [J]. PHYSICA STATUS SOLIDI, 1966, 18 (02): : 743 - &

[8] EINKRISTALLE UND PN-SCHICHTKRISTALLE AUS SILIZIUM [J]. ZEITSCHRIFT FUR PHYSIK, 1954, 139 (05): : 599 - 618

[9] ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : 796 - &

[10] Lemke H., 1970, Physica Status Solidi A, V1, P283, DOI 10.1002/pssa.19700010211

[1] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1409 - 1414

[2] DASSAM T, 1964, THESIS TU DRESDEN

[3] PRECIPITATION BEHAVIOUR OF COPPER IN SILICON SINGLE CRYSTALS [J]. PHYSICA STATUS SOLIDI, 1965, 12 (01): : 277 - &

[4] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &

[5] IRMLER H, 1958, Z NATURFORSCH PT A, V13, P557

[6] IRMLER H, 1959, THESIS TU BERLIN

[7] PSEUDO-ABRUPTE LEGIERTE P-N-UBERGANGE IN GAP [J]. PHYSICA STATUS SOLIDI, 1966, 18 (02): : 743 - &

[8] EINKRISTALLE UND PN-SCHICHTKRISTALLE AUS SILIZIUM [J]. ZEITSCHRIFT FUR PHYSIK, 1954, 139 (05): : 599 - 618

[9] ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : 796 - &

[10] Lemke H., 1970, Physica Status Solidi A, V1, P283, DOI 10.1002/pssa.19700010211