EFFECTS OF HOMOEPITAXIAL SURFACES AND INTERFACE COMPOUNDS ON THE INPLANE EPITAXY OF YBCO FILMS ON YTTRIA-STABILIZED ZIRCONIA

Control of the in-plane epitaxial alignment of c-axis YBa2Cu3O7-delta (YBCO) films on yttria-stabilized zirconia (YSZ) substrates is necessary for achieving optimal transport properties. We have used pulsed laser deposition to grow homoepitaxial YSZ and heteroepitaxial CeO2 on YSZ single crystal substrates. This procedure dramatically improves the epitaxy of YBCO and reduces the number of low and high angle grain boundaries. We have also studied the effects of preparing the YSZ growth surface with approximately monolayer amounts Of CuO, Y2O3, BaO, and BaZrO3 to determine the effects these compositional variations have on the subsequent YBCO epitaxy. CuO, Y2O3, and BaZrO3 induce an in-plane crystallography of YBCO distinct from that initiated with BaO. Both homoepitaxy and monolayer depositions may be carried out in situ and are simple and effective for controlling the epitaxy and electrical properties of YBCO on YSZ. The effects of substrate temperature, oxygen pressure, and yttria content have also been studied.