A 1-KBIT JOSEPHSON RANDOM-ACCESS MEMORY USING VARIABLE THRESHOLD CELLS

被引：24

作者：

KUROSAWA, I

NAKAGAWA, H

KOSAKA, S

AOYAGI, M

TAKADA, S

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1989年 / 24卷 / 04期

关键词：

D O I：

10.1109/4.34089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1034 / 1040

页数：7

共 13 条

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[3]

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YAGI, A ;

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[5]

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[6]

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[8] NB/AL-OXIDE/NB TUNNEL-JUNCTIONS FOR JOSEPHSON INTEGRATED-CIRCUITS [J].

NAKAGAWA, H ;

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HAYAKAWA, H .

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[9] JOSEPHSON 4-BIT DIGITAL COUNTER CIRCUIT MADE BY NB/AL-OXIDE/NB JUNCTIONS [J].

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[10]

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