NEW DEVELOPMENT IN STUDY OF AMORPHOUS SILICON HYDROGEN ALLOYS - STORY OF O

被引：92

作者：

PAESLER, MA

ANDERSON, DA

FREEMAN, EC

MODDEL, G

PAUL, W

机构：

来源：

PHYSICAL REVIEW LETTERS | 1978年 / 41卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.41.1492

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1492 / 1495

页数：4

共 17 条

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[3]

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[6]

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[7]

FREEMAN EC, UNPUBLISHED

[8] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J].

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ANDERSON, DA ;

PAUL, W .

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[9] TRANSPORT AND RECOMBINATION IN SPUTTERED HYDROGENATED AMORPHOUS-GERMANIUM [J].

MOUSTAKAS, TD ;

PAUL, W .

PHYSICAL REVIEW B, 1977, 16 (04) :1564-1576

[10]

OGUZ S, 1978, B AM PHYS SOC, V23, P247

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