0.1-MU-M GATE-LENGTH SUPERCONDUCTING FET

被引：48

作者：

NISHINO, T

HATANO, M

HASEGAWA, H

MURAI, F

KURE, T

HIRAIWA, A

YAGI, K

KAWABE, U

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 02期

关键词：

D O I：

10.1109/55.32429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：61 / 63

页数：3

共 13 条

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[5]

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IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) :297-299

[8] A PRACTICAL ELECTRON-BEAM DIRECT WRITING PROCESS TECHNOLOGY FOR SUBMICRON DEVICE FABRICATION [J].

OKAZAKI, S ;

MURAI, F ;

SUGA, O ;

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[9] SILICON-COUPLED JOSEPHSON-JUNCTIONS AND SUPER-SHOTTKY DIODES WITH COPLANAR ELECTRODES [J].

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