PHOTOREFLECTANCE LINE-SHAPES OF SEMICONDUCTOR MICROSTRUCTURES

被引：27

作者：

TANG, YS

机构：

[1] Department of Electronics and Electrical Engineering, University of Glasgow

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 12期

关键词：

D O I：

10.1063/1.347439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance line shapes of various semiconductor microstructures were discussed in this paper. Formulas suitable for application in low-dimensional structures were given and used to analyze experimental results from various semiconductor microstructures including GaAs nipi structures, GaAs/AlGaAs multiple quantum wells, InGaAs/GaAs strained-layer superlattices, and modulation-doped heterostructures.

引用

页码：8298 / 8303

页数：6

共 26 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] HIGH-RESOLUTION INTERBAND-ENERGY MEASUREMENTS FROM ELECTROREFLECTANCE SPECTRA [J].