OPTICAL CONDUCTIVITY OF FREE CARRIERS IN GAAS

被引:3
作者
JENSEN, B [1 ]
机构
[1] UNIV LOWELL, DEPT PHYS & APPL PHYS, LOWELL, MA 01854 USA
关键词
D O I
10.1016/0038-1098(77)91229-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:853 / 856
页数:4
相关论文
共 29 条
[2]   QUANTUM-THEORY OF FREE CARRIER ABSORPTION [J].
BALTZ, RV ;
ESCHER, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 51 (02) :499-&
[3]  
DEMIDENKO ZA, 1971, SOV PHYS SEMICOND+, V4, P1808
[4]   QUANTUM THEORY OF FREE CARRIER ABSORPTION [J].
DUMKE, WP .
PHYSICAL REVIEW, 1961, 124 (06) :1813-&
[5]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[6]   THE BOLTZMANN EQUATION IN THE THEORY OF ELECTRICAL CONDUCTION IN METALS [J].
GREENWOOD, DA .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (460) :585-596
[7]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) :658-&
[8]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 2. INAS [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (04) :471-&
[9]   FREE-CARRIER INFRARED ABSORPTION AND DETERMINATION OF DEFORMATION-POTENTIAL CONSTANT IN N-TYPE INSB [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (06) :777-&
[10]   FREE CARRIER ABSORPTION IN TYPE CDTE [J].
JENSEN, B .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (12) :2235-2245