ELECTRICAL CHARACTERISTICS OF MOSFET UTILIZING OXYGEN ARGON SPUTTER-DEPOSITED GATE OXIDE-FILMS

被引：26

作者：

SUYAMA, S

OKAMOTO, A

SERIKAWA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 10期

关键词：

D O I：

10.1109/T-ED.1987.23206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2124 / 2128

页数：5

共 11 条

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[8] CLEANING OF SI AND GAAS CRYSTAL-SURFACES BY ION-BOMBARDMENT IN THE 50-1500 EV RANGE - INFLUENCE OF BOMBARDING ENERGY AND SAMPLE TEMPERATURE ON DAMAGE AND INCORPORATION [J].

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