PHOTO-EPR OF DISLOCATIONS IN SILICON

被引：27

作者：

ERDMANN, R

ALEXANDER, H

机构：

[1] Physikalisches Institut, Universität Zu Köln, Abteilung Für Metallphysik

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 55卷 / 01期

关键词：

D O I：

10.1002/pssa.2210550128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of the EPR spectrum of dislocations in deformed silicon on illumination with monochromatic light reveals the two EPR centers Si—K1 (S < 1/2) to be different ionization states of one and the same dislocation center. The energy level separating these ionization states lies near the middle of the gap. Photo‐EPR of p‐ and n‐Si demonstrates that extracting an electron from the single spin states Si—K1 transforms the dislocation center into a spin‐free state. It is assumed that the transition K1 → K2 is connected with a charge state stimulated structure change. In undoped silicon the relaxation of a light induced change of the dislocation charge is strongly inhibited below 140 K. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：251 / 259

页数：9

共 26 条

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