OBIC MEASUREMENTS ON PLANAR HIGH-VOLTAGE P+-N JUNCTIONS WITH DIAMOND-LIKE CARBON-FILMS AS PASSIVATION LAYER

被引：12

作者：

FRISCHHOLZ, M

MANDEL, T

HELBIG, R

SCHMIDT, G

HAMMERSCHMIDT, A

机构：

[1] EUPEC,PRETZFELD,GERMANY

[2] SIEMENS AG,CORP RES & DEV,ERLANGEN,GERMANY

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷

关键词：

D O I：

10.1016/0169-4332(93)90756-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Diamond-like carbon (DLC) films (a-C:H) were deposited on planar p+-n junctions in silicon for electroactive passivation. The films were produced by an rf plasma discharge with different self-bias voltages. The influence of DLC films on planar p+-n junctions was studied by measurements of the locally induced photoconductivity. Using light at different wavelengths the penetration depth was varied and different parts of the space-charge region were investigated.

引用

页码：784 / 788

页数：5

共 7 条

[1] ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON [J].