OBIC MEASUREMENTS ON PLANAR HIGH-VOLTAGE P+-N JUNCTIONS WITH DIAMOND-LIKE CARBON-FILMS AS PASSIVATION LAYER

被引:12
作者
FRISCHHOLZ, M
MANDEL, T
HELBIG, R
SCHMIDT, G
HAMMERSCHMIDT, A
机构
[1] EUPEC,PRETZFELD,GERMANY
[2] SIEMENS AG,CORP RES & DEV,ERLANGEN,GERMANY
关键词
D O I
10.1016/0169-4332(93)90756-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Diamond-like carbon (DLC) films (a-C:H) were deposited on planar p+-n junctions in silicon for electroactive passivation. The films were produced by an rf plasma discharge with different self-bias voltages. The influence of DLC films on planar p+-n junctions was studied by measurements of the locally induced photoconductivity. Using light at different wavelengths the penetration depth was varied and different parts of the space-charge region were investigated.
引用
收藏
页码:784 / 788
页数:5
相关论文
共 7 条
[1]   ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON [J].
AISENBERG, S ;
CHABOT, R .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2953-+
[2]  
AISENBERG S, 1989, MATER SCI FORUM, V52, P1
[3]   RF-PLASMA DEPOSITED AMORPHOUS HYDROGENATED HARD CARBON THIN-FILMS - PREPARATION, PROPERTIES, AND APPLICATIONS [J].
BUBENZER, A ;
DISCHLER, B ;
BRANDT, G ;
KOIDL, P .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4590-4595
[4]   PHOTOACOUSTIC AND OBIC MEASUREMENTS ON PLANAR HIGH-VOLTAGE P+-N JUNCTIONS [J].
FLOHR, T ;
HELBIG, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (10) :1683-1686
[5]  
SANDOE JN, 1983, ACTA ELECTRON, V3, P201
[6]   HIGH-VOLTAGE PLANAR JUNCTIONS INVESTIGATED BY THE OBIC METHOD [J].
STENGL, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :911-919
[7]   PASSIVATION OF P-N-JUNCTION IN CRYSTALLINE SILICON BY AMORPHOUS SILICON [J].
TARNG, ML ;
PANKOVE, JI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1728-1734