ATOMIC LAYER GROWTH OF TIO2 ON SILICA

被引：98

作者：

LAKOMAA, EL ^{[1
]}

HAUKKA, S ^{[1
]}

SUNTOLA, T ^{[1
]}

机构：

[1] UNIV HELSINKI,DEPT CHEM,DIV ANALYT CHEM,SF-00100 HELSINKI 10,FINLAND

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

基金：

芬兰科学院;

关键词：

D O I：

10.1016/0169-4332(92)90506-S

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Study was made of the initial stages of TiO2 on porous high-surface-area silica support by atomic layer epitaxy (ALE). The effects of the number and types of surface bonding sites and the reaction temperature on the growth rate and structure Of TiO2 were determined. The reactants were TiCl4 and H2O. At 175-degrees-C binding of TiCl4 takes place to one or to two hydroxyl groups, but at 450-degrees-C only to two isolated hydroxyl groups. The number and type of binding sites available and the reaction temperature selected determine how the growth will proceed. XRD peaks at the 2theta values of anatase and rutile were detected after one reaction cycle of TiCl4 and H2O at 450-degrees-C.

引用

页码：742 / 748

页数：7

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