ON THE THEORY OF DEBYE AVERAGING IN THE C-V PROFILING OF SEMICONDUCTORS

被引：65

作者：

KROEMER, H

CHIEN, WY

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 07期

关键词：

D O I：

10.1016/0038-1101(81)90195-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：655 / 660

页数：6

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[7] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

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[10] DEPLETION APPROXIMATION ANALYSIS OF THE DIFFERENTIAL CAPACITANCE-VOLTAGE CHARACTERISTICS OF AN MOS STRUCTURE WITH NONUNIFORMLY DOPED SEMICONDUCTORS [J].

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