HYDROGENATED CRYSTALLINE SILICON FABRICATED AT LOW-SUBSTRATE TEMPERATURES BY REACTIVE SPUTTERING IN HE-H2 ATMOSPHERE

被引:40
作者
IMURA, T [1 ]
MOGI, K [1 ]
HIRAKI, A [1 ]
NAKASHIMA, S [1 ]
MITSUISHI, A [1 ]
机构
[1] OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
关键词
D O I
10.1016/0038-1098(81)90158-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:161 / 164
页数:4
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