ULTRA-BROAD-BAND GAAS MONOLITHIC AMPLIFIER

被引：11

作者：

HONJO, K

SUGIURA, T

ITOH, H

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1982年 / 30卷 / 07期

关键词：

D O I：

10.1109/TMTT.1982.1131193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1027 / 1033

页数：7

共 13 条

[1]

ATKINSON WR, 1960, P IRE, V48, P69

[2]

DECKER DR, 1980, 1980 IEEE MTTS INT M, P363

[3] DESIGN OF MICROWAVE GAAS-MESFETS FOR BROAD-BAND LOW-NOISE AMPLIFIERS [J].

FUKUI, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (07) :643-650

[4] GAAS-FET ULTRABROAD-BAND AMPLIFIERS FOR GBIT-S DATA RATE SYSTEMS [J].

HONJO, K ;

TAKAYAMA, Y .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (07) :629-636

[5]

HONJO K, 1981, OCT IEEE GAAS IC S

[6]

HORNBUCKLE DP, 1981, IEEE T ELECTRON DEVI, V28

[7]

Niclas K. B., 1981, 1981 IEEE MTT-S International Microwave Symposium Digest, P356

[8]

PUCEL RA, 1976, IEEE J SOLID-ST CIRC, V11, P243, DOI 10.1109/JSSC.1976.1050711

[9]

SONE J, 1978, IEEE T ELECTRON DEV, V25, P330

[10] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

CHYE, PW ;

SKEATH, PR ;

SU, CY ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433

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