LOW-TEMPERATURE FABRICATION OF PB(ZR,TI)O-3 FILMS BY RF REACTIVE SPUTTERING USING ZR/TI+PBO TARGET

Pb(Zr,Ti)O-3 (PZT) films were grown on fused quartz substrates by reactive sputtering using a Zr/Ti (50%/50%) alloy target combined with PbO pellets under argon pressure of 10m Torr and O-2/Ar flow rate ratio of 2.1%. Structure and deposition rate of the films have been investigated as functions of substrate temperature and PbO content. When films mere grown in near metallic mode using a Zr/Ti + 41%PbO target, perovskite PZT films were successfully prepared at a temperature as low as 450 degrees C, and in the wide range from 450 degrees C to 570 degrees C. It was impossible to obtain perovskite PZT films using only a stoichiometic Pb(Zr0.5Ti0.5)O-3 ceramic target, while perovskite PZT films could be obtained between 540 degrees C and 570 degrees C using a Pb(Zr0.5Ti0.5)O-3 + 15%PbO target. Deposition rate of perovskite films for the Zr/Ti + 41%PbO target was 2-3 times higher than that for the PZT + 15%PbO target.