NEGATIVE PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON

被引:9
作者
BARRETT, JR
GERHARD, GC
机构
关键词
D O I
10.1063/1.1709448
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:900 / &
相关论文
共 8 条
  • [1] PROPERTIES OF GOLD-DOPED SILICON
    COLLINS, CB
    CARLSON, RO
    GALLAGHER, CJ
    [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173
  • [2] A HIGH GAIN SILICON PHOTODETECTOR
    ING, SW
    GERHARD, GC
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11): : 1714 - &
  • [3] INFRARED PROPERTIES OF GOLD IN GERMANIUM
    JOHNSON, L
    LEVINSTEIN, H
    [J]. PHYSICAL REVIEW, 1960, 117 (05): : 1191 - 1203
  • [4] CASCADE CAPTURE OF ELECTRONS IN SOLIDS
    LAX, M
    [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523
  • [5] PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
    NEWMAN, R
    [J]. PHYSICAL REVIEW, 1954, 94 (06): : 1530 - 1531
  • [6] Rose A., 1963, CONCEPTS PHOTOCONDUC, P64
  • [7] NEGATIVE PHOTOEFFEKTE IN HALBLEITERN
    STOCKMANN, F
    [J]. ZEITSCHRIFT FUR PHYSIK, 1955, 143 (03): : 348 - 356
  • [8] GOLD AS A DONOR IN SILICON
    TAFT, EA
    HORN, FH
    [J]. PHYSICAL REVIEW, 1954, 93 (01): : 64 - 64