EMISSION OF IR-RADIATION AT GERMANIUM ELECTRODES BY ELECTROCHEMICAL INJECTION OF MINORITY CARRIERS

被引:14
作者
GOBRECHT, H
SCHALDAC.M
HEIN, F
PAATSCH, W
机构
[1] II. Physikalisches Institut der Technischen Universität
关键词
D O I
10.1016/0013-4686(68)80055-6
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Excess minority carriers were injected into n-type germanium by the electrochemical reduction of either hydrogen ion or ferricyanide ion at the surface, and the resulting ir-emission was determined. The ir-emission decreases when either germanium dissolution or the surface-recombination rate increase. The effects are compared with those produced by minority-carrier injection produced by illumination. © 1968.
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页码:1279 / &
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