EVIDENCE FOR A NATIVE DONOR IN ZNSE FROM HIGH TEMPERATURE ELECTRICAL MEASUREMENTS

被引：28

作者：

SMITH, FTJ

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 24期

关键词：

D O I：

10.1016/0038-1098(69)90279-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The resistivity and Hall coefficient of cubic zinc selenide crystals have been measured at temperatures up to 1000°C in zinc vapor. The crystals are n-type, and the electron concentration increases with the 1 2 power of the zinc pressure. This behavior indicates the presence of a singly ionized native donor defect. The enthalpy of formation of this donor and its concentration along the zinc-rich solidus have been determined. © 1969.

引用

页码：1757 / &

共 11 条

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