INVESTIGATION OF PHONONS IN HGCDTE USING RAMAN-SCATTERING AND FAR-INFRARED REFLECTIVITY

被引:26
作者
AMIRTHARAJ, PM
DHAR, NK
BAARS, J
SEELEWIND, H
机构
[1] US Army Center for Night Vision and Electro-Opt., Fort Belvoir, VA
关键词
D O I
10.1088/0268-1242/5/3S/015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors have measured and analyzed the Raman-scattering and far-infrared spectra from unoriented n- and p-type Hg1-xCd xTe with x approximately=0.21. Measurements were made in the 80-180 cm-1 frequency region at temperatures of 10 and 80 K. Comparison of the n- and p-type spectra leads to the conclusion that the electronic contribution to the Raman spectra is small. In particular, the data show that the 135 cm-1 feature originates in lattice effects and may be related to the Te-3Hg-Cd combination as previously suggested. The weak but distinct fine structure present in the CdTe-like reststrahlen band at approximately 153 cm-1 is tentatively assigned to be a result of localised oscillations of Cd ions in the alloy lattice. A study of the spectral changes between 10 and 80 K clearly indicates a softening of the HgTe-like TO phonon.
引用
收藏
页码:S68 / S72
页数:5
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