THERMOELECTRIC-POWER OF N-GAAS

被引：10

作者：

SUTRADHAR, SK

CHATTOPADHYAY, D

机构：

[1] Institute of Radio Physics and Electronics, Calcutta-700 009

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 09期

关键词：

D O I：

10.1088/0022-3719/12/9/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The thermoelectric power of n-GaAs has been computed at different lattice temperatures and electron concentrations incorporating the band non-parabolicity, the p-function admixture and the effects of electron screening and degeneracy on scattering probabilities. All the relevant scattering mechanisms have been considered and the currently established material parameters are used in the computations. The calculated results agree very well with experiment.

引用

页码：1693 / 1697

页数：5

共 12 条

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