LOW-DENSITY INJECTED PLASMA IN P-TYPE INDIUM ANTIMONIDE

被引：6

作者：

HEINRICH, H

KUCHAR, F

MERINSKY, K

机构：

来源：

关键词：

D O I：

10.1063/1.1658337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：296 / &

共 7 条

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[2] CYCLOTRON RESONANCE IN P-TYPE INSB AT MILLIMETRE WAVELENGTHS
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ROBINSON, MLA
STRADLING, RA
[J]. PHYSICS LETTERS, 1963, 6 (02): : 143 - 145
[3] RECOMBINATION CENTERS IN INSB
HOLLIS, JEL
CHOO, SC
HEASELL, EL
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1626 - &
[4] CARRIER LIFETIME IN INDIUM ANTIMONIDE
LAFF, RA
FAN, HY
[J]. PHYSICAL REVIEW, 1961, 121 (01): : 53 - &
[5] MADISTOR - MAGNETICALLY CONTROLLED SEMICONDUCTOR PLASMA DEVICE
MELNGAILIS, I
REDIKER, RH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2428 - &
[6] NEGATIVE-RESISTANCE CURRENT-VOLTAGE CHARACTERISTICS OF AN INDIUM ANTIMONIDE P+-P-N+ DIODE
NORDMAN, JE
KVINLAUG, H
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3244 - &
[7] STERN F, 1960, P INTERN C SEMICOND, P363