HALL-EFFECT IN VO2 NEAR SEMICONDUCTOR-TO-METAL TRANSITION

被引：90

作者：

ROSEVEAR, WH ^{[1
]}

PAUL, W ^{[1
]}

机构：

[1] HARVARD UNIV,DIV ENGN & APPL PHYS,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.7.2109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2109 / 2111

页数：3

共 16 条

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[4]

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[9] METAL-INSULATOR TRANSITION IN VO2 [J].

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[10]

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