X-RAY-IMAGING CAMERA TUBE USING SPUTTER-DEPOSITED CDTE/CDS HETEROJUNCTION

被引：7

作者：

TOMITA, Y ^{[1
]}

HATANAKA, Y ^{[1
]}

TAKABAYASHI, T ^{[1
]}

KAWAI, T ^{[1
]}

机构：

[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 02期

关键词：

D O I：

10.1109/16.182507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) heterojunction devices have been fabricated for the first time by RF sputter deposition method for application to X-ray imaging sensors. The electrical resistivities of sputter-deposited polycrystalline CdS and CdTe films are greater than 10(6) OMEGA . cm and 10(9) OMEGA - cm, respectively. The structures of CdS and CdTe films are wurtzite type with a preferential orientation of (002) plane, and zincblende type with a preferential orientation of (111) plane parallel to the substrate, respectively. The fabricated CdS/CdTe heterojunction sensor shows a good diode characteristic and a high sensitivity to X-ray radiation. An X-ray imaging camera tube consisting of CdS/CdTe heterojunction photoconductive target shows three times larger responsivity to X-rays than the conventional PbO X-ray tube. The dark current density of the device is observed to be lower than 10 nA/CM2 at 20 V of target voltage at room temperature.

引用

页码：315 / 319

页数：5

共 9 条

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