GENERATION OF ELECTROCHEMICALLY DEPOSITED METAL PATTERNS BY MEANS OF ELECTRON-BEAM (NANO)LITHOGRAPHY OF SELF-ASSEMBLED MONOLAYER RESISTS

被引：95

作者：

SONDAGHUETHORST, JAM

VANHELLEPUTTE, HRJ

FOKKINK, LGJ

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.111182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Submicron metal patterns have been produced by galvanic deposition in openings in a monolayer resist generated by electron beam (e-beam) lithography. The monolayer resist is a self-assembled docosanethiol (C22H45SH) layer adsorbed on gold. Proper removal of the thiol requires an e-beam dose of 10-100 mC cm-2. The positive resist pattern was used to selectively deposit galvanic copper. The size of the Cu patterns is affected by the galvanic deposition time and the CuSO4 concentration in the electrolyte solution. The smallest Cu patterns produced were about 75 nm in width.

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页码：285 / 287

页数：3

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