RAMAN-SCATTERING AND X-RAY-DIFFRACTOMETRY STUDIES OF EPITAXIAL TIO2 AND VO2 THIN-FILMS AND MULTILAYERS ON ALPHA-AL2O3(11(2)OVER-BAR-0)

被引：11

作者：

FOSTER, CM ^{[1
]}

CHIARELLO, RP ^{[1
]}

CHANG, HLM ^{[1
]}

YOU, H ^{[1
]}

ZHANG, TJ ^{[1
]}

FRASE, H ^{[1
]}

PARKER, JC ^{[1
]}

LAM, DJ ^{[1
]}

机构：

[1] NANOPHASE TECHNOL CORP,DARIEN,IL 60559

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.353036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial thin films of TiO2 and VO2 single layers and TiO2/VO2 multilayers were grown on (1120BAR) sapphire (alpha-Al2O3) substrates using the metalorganic chemical vapor deposition technique and were characterized using Raman scattering and four-circle x-ray diffractometry. X-ray diffraction results indicate that the films are high quality single crystal material with well defined growth plane and small in-plane and out-of-plane mosaic. Single-layer films are shown to obey the Raman selection rules of TiO2 and VO2 single crystals. The close adherence to the Raman selection rules indicates the high degree of orientation of the films, both parallel and perpendicular to the growth plane. Selection rule spectra of two and three layer TiO2/VO2 multilayers are dominated by the VO2 layers with only minimal signature of the TiO2 layers. Due to the low band gap of semiconducting vanadium dioxide, we attribute the strong signature of the VO2 layers to resonant enhancement of the VO2 Raman component accompanied with absorption of the both the incident and scattered laser light from the TiO2 layers.

引用

页码：2841 / 2847

页数：7

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[1] STUDIES ON VANADIUM OXIDES .2. THE CRYSTAL STRUCTURE OF VANADIUM DIOXIDE [J].