STABLE AND METASTABLE PHASE-EQUILIBRIA IN THE CHEMICAL INTERACTION BETWEEN ALUMINUM AND SILICON-CARBIDE

被引:248
作者
VIALA, JC
FORTIER, P
BOUIX, J
机构
[1] Laboratoire de Physico-chimie Minérale 1, U. A. CNRS 116, Université Claude Bernard Lyon 1, Villeurbanne Cedex
关键词
D O I
10.1007/BF01045395
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An experimental investigation was carried out on the Al-C-Si ternary system under atmospheric pressure and at temperatures up to 1900 K. From the results obtained, a thermodynamic model based on stable and metastable phase equilibria in the Al-C-Si ternary system was set up in order to provide a general description of the chemical interaction between aluminium and SiC. According to this model, aluminium and SiC are in thermodynamic equilibrium at every temperature lower than 923 K. At 923±3 K, i.e. at 10 K below the melting point of pure aluminium, a quasiperitectic invariant transformation occurs in the Al-C-Si system. In this transformation, solid aluminium reacts with SiC to give Al4C3 and a ternary (Al-C-Si) liquid phase. The carbon content of this liquid phase is very low; its silicon content is 1.5±0.4 at%. From 923 to about 1620 K, aluminium partially reacts with an excess of SiC, leading to a metastable monovariant equilibrium involving SiC, Al4C3 and an aluminium-rich (Al-C-Si) ternary liquid phase, L. The carbon content of this liquid phase, L, remains very low whereas its silicon content increases with temperature from 1.5±0.4 at% at 923 K to 16.5±1 at% at 1620 K. In the temperature range 1670 to 1900 K, two other three-phased monovariant equilibria can be reached by reacting aluminium and SiC. These equilibria involve on the one hand SiC, Al4SiC4 and a liquid phase, L′, and on the other hand, Al4SiC4, Al4C3 and a liquid phase, L″. The former is a stable equilibrium, the latter is a metastable one. At temperatures higher than about 2200 K, the latter metastable equilibrium is replaced by two monovariant stable phase equilibria including the ternary carbide Al8SiC7. © 1990 Chapman and Hall Ltd.
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页码:1842 / 1850
页数:9
相关论文
共 28 条
[1]  
BARCZAC VJ, 1961, J AM CERAM SOC, P299
[2]   AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE AL/SIC INTERFACE [J].
BERMUDEZ, VM .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :70-72
[3]  
CHOH T, 1987, MAT SCI TECH, V3, P1
[4]   THE WETTING OF SOLIDS BY MOLTEN METALS AND ITS RELATION TO THE PREPARATION OF METAL-MATRIX COMPOSITES [J].
DELANNAY, F ;
FROYEN, L ;
DERUYTTERE, A .
JOURNAL OF MATERIALS SCIENCE, 1987, 22 (01) :1-16
[5]  
Dermarkar S., 1986, METAL MAT I METHODS, V2, P144
[6]  
DORNER P, 1982, THESIS STUTTGARD
[7]  
ELLIOTT RP, 1965, CONSTITUTION BINARY, P55
[8]   X-RAY CRYSTALLOGRAPHIC DATA ON ALUMINUM SILICON-CARBIDE, ALPHA-AL4SIC4 AND AL4SI2C5 [J].
INOUE, Z ;
INOMATA, Y ;
TANAKA, H ;
KAWABATA, H .
JOURNAL OF MATERIALS SCIENCE, 1980, 15 (03) :575-580
[9]   INTERFACIAL REACTIONS BETWEEN SIC AND ALUMINUM DURING JOINING [J].
ISEKI, T ;
KAMEDA, T ;
MARUYAMA, T .
JOURNAL OF MATERIALS SCIENCE, 1984, 19 (05) :1692-1698
[10]   TRACE-ELEMENT EFFECTS ON AL-SIC INTERFACES [J].
KANNIKESWARAN, K ;
LIN, RY .
JOURNAL OF METALS, 1987, 39 (09) :17-19