IDENTIFICATION OF THE SICL2 (A3B1-X1A1) EMISSION SYSTEM AND A FLOW REACTOR SOURCE OF SICL2(A3B1)

被引：15

作者：

DU, KY

CHEN, XS

SETSER, DW

机构：

[1] Department of Chemistry, Kansas State University, Manhattan

来源：

CHEMICAL PHYSICS LETTERS | 1991年 / 181卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0009-2614(91)80082-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The reactions of Ar(3P0,2) atoms with SiCl4 and SiHCl3, as well as direct electron impact with SiCl4, give an intense emission system from 500 to 650 nm. Based upon the spectroscopic constants of the upper and lower states and the long lifetime, almost-equal-to 11 +/- 2 ms, the emission is assigned as the SiCl2 (a 3B1-X 1A1) transition. The energy for SiCl2 (a) is 2.35 eV; the bending frequency of the upper state is 159 +/- 2 cm-1. The quenching rate constants of SiCl2 (a approximately) by NO, C2H4, NH3 and CH4 are 1.2 x 10(-11), 1.3 x 10(-11), 4.1 x 10(-13), and 1.5 x 10(-11) cm3 molecule-1 s-1, respectively.

引用

页码：344 / 350

页数：7

共 19 条

[1] NF(B) QUENCHING RATE CONSTANTS AT 300-K - ELECTRONIC-TO-VIBRATIONAL ENERGY-TRANSFER [J].