THE EFFECT OF GROWTH-RATE, DIAMETER AND IMPURITY CONCENTRATION ON STRUCTURE IN CZOCHRALSKI SILICON CRYSTAL-GROWTH

被引：12

作者：

DIGGES, TG ^{[1
]}

SHIMA, R ^{[1
]}

机构：

[1] JET PROPULS LAB, PASADENA, CA 91103 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 04期

关键词：

D O I：

10.1016/0022-0248(80)90149-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：865 / 869

页数：5

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