DEFECT PROFILING IN MULTILAYERED SYSTEMS USING MEAN DEPTH SCALING

Ghosh et al. recently proposed that positron stopping profiles in elements and elemental multilayers, calculated by Monte Carlo for incident positron energies in the range 1-10 keV, may be scaled onto energy independent curves using the mean implantation depth. It is shown here that Monte Carlo stopping profiles in elemental multilayer systems can be reproduced accurately in the incident energy range 1-25 keV using a modification of this scaling model that takes into account the backscattering effects of interfaces. The mean depth scaling approach represents a saving of several orders of magnitude in the computation time for multilayer stopping profiles and has been incorporated into a new defect profiling program POSTRAP6.