MAGNETORESISTANCE OF VERY PURE SIMPLE METALS

被引:22
作者
BUTTIKER, M
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 05期
关键词
D O I
10.1103/PhysRevB.42.3197
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-magnetic-field anomalies in pure and simple metals such as Al, K, and In are explained in terms of carrier transport along two-dimensional skipping orbit states. Our approach explains in a very simple way the linear magnetoresistance due to grooves and projections at the sample surface. Our approach also provides an explanation for the negative voltages measured in certain geometries. © 1990 The American Physical Society.
引用
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页码:3197 / 3200
页数:4
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