EFFECT OF INSITU POSTDEPOSITION ANNEALING ON THE FORMATION OF ALPHA-IN2SE3 THIN-FILMS GROWN BY ELEMENTAL EVAPORATION

被引：30

作者：

THOMAS, B

机构：

[1] Department of Physics, Cochin University of Science and Technology, Cochin

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 03期

关键词：

D O I：

10.1007/BF00323853

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stoichiometric polycrystalline In2Se3 thin films have been grown by elemental evaporation on both glass and quartz substrates. The compositions are examined by DAN fluorimetry and X-ray photoelectron spectroscopy (XPS). Structure of the films are characterized by X-ray diffraction. The structure of this alpha-form of thin films have been determined to be hexagonal. Optimization of the preparative conditions employed for elemental evaporation, helped in preparing monophasic films by the suppression of other phases to a very minor extent. Influence of annealing conditions on the stoichiometry of the films are investigated in detail.

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页码：293 / 299

页数：7

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