ANISOTROPY OF ABSORPTION DUE TO FREE ELECTRONS IN 6H SILICON CARBIDE

被引：14

作者：

Ellis, B. ^{[1
]}

Moss, T. S. ^{[1
]}

机构：

[1] Royal Aircraft Estab, Farnborough, Hants, England

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 06期

关键词：

D O I：

10.1016/0038-1098(65)90382-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Anisotropy has been observed in free carrier absorption, the absorption coefficients for radiation polarized perpendicular and parallel to the symmetry axis differing by a factor approaching 4 in n-type 6H SiC. Assuming an isotropic relaxation time, this gives the ratio of the principal electrical conductivities and the corresponding masses.

引用

页码：109 / 111

页数：3

共 8 条

[1]

AUSTIN IG, 1959, ELECTRONICS, V6, P271

[2]

BEER AC, 1963, GALVANOMAGNETIC EFFE, P265

[3] EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC [J].

CHOYKE, WJ ;

PATRICK, L .

PHYSICAL REVIEW, 1962, 127 (06) :1868-&

[4] INFRA-RED ABSORPTION IN SEMICONDUCTORS [J].

FAN, HY .

REPORTS ON PROGRESS IN PHYSICS, 1956, 19 :107-155

[5] ABSORPTION FREIER LADUNGSTRAGER IN ALPHA-SIC-KRISTALLEN [J].

GROTH, R ;

KAUER, E .

PHYSICA STATUS SOLIDI, 1961, 1 (05) :445-450

[6]

MOSS TS, 1964, P INT C SEMICONDUCTO, P311

[7]

Spitzer W. G., 1960, SILICON CARBIDE HIGH, P347

[8]

VIOLINA GN, 1964, SOV PHYS-SOL STATE, V5, P2500

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