GATE CURRENT IN OFF-STATE MOSFET

被引：18

作者：

CHEN, J

CHAN, TY

KO, PK

HU, CM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 05期

关键词：

D O I：

10.1109/55.31721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：203 / 205

页数：3

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