EMITTER INJECTION AND COLLECTOR CURRENT IDEALITY IN ABRUPT HETEROJUNCTION A1INAS/GAINAS HBTS

We investigated the electron injection process for high-speed N-p-n AlInAs/GaInAs HBTs by measuring collector and base currents as a function of base-emitter voltage with collector-base voltage equal to zero (Gummel plots) at temperatures from 77 to 300 K. We compared the measured collector current with calculations based on electron injection from emitter to base by tunneling through the conduction band spike and thermionic emission over it, using a modified version of the thermionic-field emission theory developed by Crowell and Rideout. Good agreement was obtained between the experimental collector current ideality factor and tunneling-thermionic emission theory for all temperatures and currents. This is an improvement over drift-diffusion and thermionic emission models, which have been used for HBTs but which do not correctly describe the experimentally observed temperature and current dependence of the ideality of the collector current. The tunneling-thermionic emission model explains the increase in collector current ideality factor that occurs as the transistor is biased at high collector current density (J(C) greater-than-or-equal-to 10(5) A cm-2), which is the regime of operation in which f(T) is maximized and a low ideality factor is most important. The model also explains the experimentally observed variation of h(FE) with In I(C). Thus the tunneling-thermionic emission model is a useful aid in the design of the epitaxial structure for high-frequency HBTs.