STOICHIOMETRY MEASUREMENTS OF GAAS BY MEANS OF 15-MEV HE++ BACKSCATTERING

被引：4

作者：

KUDO, H

OCHIAI, Y

TAKITA, K

MASUDA, K

SEKI, S

机构：

[1] UNIV TSUKUBA,INST MAT SCI,SAKURA,IBARAKI 30031,JAPAN

[2] UNIV TSUKUBA,INST PHYS,SAKURA,IBARAKI 30031,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.325599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The stoichiometry of heat-treated GaAs crystals was measured over the region about 1 μm below the surface by means of 15-MeV He++ backscattering. Samples were annealed for 1 h at various temperatures between 200 and 900 °C. The annealing-temperature dependence of the concentration ratio of As to Ga in the above-mentioned region shows abrupt change at around 250 °C and at around 800 °C. For annealing at 300-700 °C, this ratio (0.81±0.05) is almost independent of the annealing temperature.

引用

页码：5034 / 5035

页数：2