OBSERVATION OF SPIN PRECESSION IN GAAS INVERSION-LAYERS USING ANTILOCALIZATION

被引：227

作者：

DRESSELHAUS, PD ^{[1
]}

PAPAVASSILIOU, CMA ^{[1
]}

WHEELER, RG ^{[1
]}

SACKS, RN ^{[1
]}

机构：

[1] UNITED TECHNOL RES CTR, E HARTFORD, CT 06108 USA

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.68.106

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nearly-zero-field magnetoconductance measurements have been used to deduce the conduction-band spin splitting of GaAs. The dominant spin-scattering mechanism is the randomization of spin precession due to elastic scattering. By independently controlling electron density and mobility, it is observed that the crystal-field-induced spin splitting is the cause of the spin-orbit scattering. This technique is used to infer the band-structure splitting parameter, a42 = 26.1 +/- 0.9 eV angstrom3.

引用

页码：106 / 109

页数：4

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