SMALL-SIGNAL ANALYSIS OF SEMICONDUCTOR-LASERS MODULATED AT FREQUENCIES ON THE ORDER OF THE BEAT FREQUENCY

被引:3
作者
DODS, SRA
OGURA, M
WATANABE, M
机构
[1] Electrotechnical Laboratory, Tsukuba
关键词
D O I
10.1109/3.250385
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A small-signal analysis of direct modulation of laser diodes is presented. The analysis is valid over a wide frequency range, up to the frequency corresponding to the round trip time of the active region. This theory is best for laser diodes with small active regions but with large and complicated optical cavities. Optical resonances may occur in this range, resulting in a large response to direct modulation as a result of interaction of the lasing mode with the optical resonance. This theory can predict the linear response of the laser to direct modulation throughout this frequency range. It also predicts the lower frequency relaxation oscillation effect, thus unifying these different effects with a single treatment. The form of the modulation response is found to be the same as the standard relaxation oscillation formula, modified by a factor the form of which depends on the optics of the laser cavity alone.
引用
收藏
页码:2631 / 2638
页数:8
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