POSSIBLE SOURCES OF ERROR IN DEDUCTION OF SEMICONDUCTOR IMPURITY CONCENTRATIONS FROM SCHOTTKY-BARRIER (C V) CHARACTERISTICS

Experimental results are presented which show that surface contamination due to the method of preparation and bulk trapping centres can have a first-order effect on semiconductor impurity concentration measurements using Schottky barriers. A criterion is established which allows the reliability of the measurements to be assessed, and a method is given for measuring the impurity concentration in the presence of traps.