HYDROGENATED SI-CLUSTERS - BAND FORMATION WITH INCREASING SIZE

被引:176
作者
REN, SY
DOW, JD
机构
[1] UNIV SCI & TECHNOL CHINA,DEPT PHYS,HEFEI 230026,PEOPLES R CHINA
[2] ARIZONA STATE UNIV,DEPT PHYS & ASTRON,TEMPE,AZ 85287
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 12期
关键词
D O I
10.1103/PhysRevB.45.6492
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structures of various Si clusters of different sizes (with hydrogenated surfaces) are evaluated using a nearest-neighbor empirical tight-binding Hamiltonian which describes well the band structure and fundamental band gap of crystalline silicon. The largest cluster contains 3109 Si atoms and 852 H atoms, has a diameter of 49 angstrom, and has both a normalized Si density of states and a band gap very close to those of crystalline Si.
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页码:6492 / 6496
页数:5
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