DRIFT MOBILITY AND PHOTOCONDUCTIVITY FOR P-TYPE AND N-TYPE SPUTTERED GE25SE75-XBIX FILMS

被引：5

作者：

KOUNAVIS, P ^{[1
]}

MYTILINEOU, E ^{[1
]}

机构：

[1] INST CHEM ENGN & HIGH TEMP CHEM PROC,GR-26110 PATRAS,GREECE

来源：

关键词：

D O I：

10.1016/0022-3093(89)90082-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：103 / 105

页数：3

共 6 条

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[2] DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON
FUHS, W
MILLEVILLE, M
STUKE, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 495 - 502
[3] P-N-JUNCTIONS FROM SPUTTERED GE25SE75-XBIX FILMS
KOUNAVIS, P
MYTILINEOU, E
ROILOS, M
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 708 - 710
[4] A STUDY OF N-TYPE CONDUCTION IN AMORPHOUS-CHALCOGENIDE SPUTTERED FILMS
MYTILINEOU, E
KOUNAVIS, P
CHAO, BS
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (28) : 4687 - 4695
[5] TOGHE N, 1986, APPL PHYS LETT, V48, pM1739
[6] TIME-OF-FLIGHT STUDY OF CHALCOGENIDE GLASSES CHEMICALLY MODIFIED BY BISMUTH
TOHGE, N
YONESAKI, T
MINAMI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4225 - 4229