TUNNEL TRANSFER OF ELECTRONS, HOLES AND EXCITONS IN BIASED HETEROSTRUCTURES

被引：5

作者：

DELALANDE, C

ROLLAND, P

机构：

[1] Laboratoire de Physique de la Matière Condensée, l'Ecole Normale Supérieure, F-75005 PARIS, 24, rue Lhomond

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1016/0749-6036(90)90266-A

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of low temperature optical studies of tunnel transfer in biased asymmetric double quantum well structures are reported. Calculations of the defect-induced tunneling rates are also performed and compared favorably with experiment, showing the resonant transfer of excitons near electron and hole resonances. © 1990.

引用

页码：7 / 12

页数：6

共 19 条

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[8] RESONANTLY ENHANCED ELECTRON-TUNNELING RATES IN QUANTUM WELLS
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[10] MILLER DAB, 1986, IEEE J QUANTUM ELECT, V22, P1826

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