INFRARED EXCITED-STATE ABSORPTION OF NI2+ DOPED CRYSTALS

被引:12
作者
KOETKE, J
PETERMANN, K
HUBER, G
机构
[1] Institut für Laser-Physik, Universität Hamburg, 20355 Hamburg
关键词
D O I
10.1016/0022-2313(94)90128-7
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The excited state absorption spectra of Ni2+:MgO and Ni2+:Gd3Ga5O12 were measured in the complete region of the infrared emission. The emission band overlaps both with the excited state absorption band and the 3A2(3F) --> 3T2(3F) ground state absorption band. At low temperatures all bands are narrower and exhibit sharp structures, reducing the losses to the laser emission. The structure of the excited state absorption spectrum of Ni2+:MgO at 10 K is assigned to zero phonon lines and vibrational sidebands of the T1, T2(3T1(3F)) spin-orbit components and to vibrational sidebands of the E component.
引用
收藏
页码:197 / 200
页数:4
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