ON THE SYSTEMATICS OF POSITRON LIFETIMES IN METALS

被引：108

作者：

SEEGER, A ^{[1
]}

BANHART, F ^{[1
]}

机构：

[1] MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 102卷 / 01期

关键词：

D O I：

10.1002/pssa.2211020117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：171 / 179

页数：9

共 43 条

[1] EFFECT OF VACANCY FORMATION ON TEMPERATURE DEPENDENCE OF POSITRON LIFETIME [J].

BERGERSEN, B ;

STOTT, MJ .

SOLID STATE COMMUNICATIONS, 1969, 7 (17) :1203-+

[2] POSITRON LIFETIMES IN SOLID AND LIQUID METALS [J].

BRANDT, W ;

WAUNG, HF .

PHYSICS LETTERS A, 1968, A 27 (10) :700-&

[3] POSITRON ANNIHILATION AND DEFECTS IN METALS [J].

CONNORS, DC ;

WEST, RN .

PHYSICS LETTERS A, 1969, A 30 (01) :24-&

[4] A SYSTEMATIC STUDY OF POSITRON LIFETIMES IN SEMICONDUCTORS [J].

DANNEFAER, S .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (03) :599-605

[5]

DEDIEGO N, 1987, VACANCIES INTERSTIT, P193

[6] EQUILIBRIUM DEFECT CONCENTRATION IN CRYSTALLINE LITHIUM [J].

FEDER, R .

PHYSICAL REVIEW B, 1970, 2 (04) :828-&

[7] EQUILIBRIUM DEFECT CONCENTRATION IN CRYSTALLINE SODIUM [J].

FEDER, R ;

CHARBNAU, HP .

PHYSICAL REVIEW, 1966, 149 (02) :464-&

[8] ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

FUHS, W ;

HOLZHAUER, U ;

MANTL, S ;

RICHTER, FW ;

STURM, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (01) :69-75

[9] NEW PRECISION-MEASUREMENTS OF THE DECAY-RATES OF SINGLET AND TRIPLET POSITRONIUM [J].

GIDLEY, DW ;

RICH, A ;

SWEETMAN, E ;

WEST, D .

PHYSICAL REVIEW LETTERS, 1982, 49 (08) :525-528

[10]

HAAF M, COMMUNICATION

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